TGStat
TGStat
Qidiruv uchun matnni kiriting
Ilg‘or kanal qidiruvi
  • flag Uzbek
    Sayt tili
    flag Russian flag English flag Uzbek
  • Saytga kirish
  • Katalog
    Kanal va guruhlar katalogi Kanallar qidiruvi
    Kanal/guruh qo‘shish
  • Reytinglar
    Kanallar reytingi Guruhlar reytingi Postlar reytingi
    Brendlar va shaxslar reytingi
  • Analitika
  • Postlarda qidiruv
  • Telegram'ni kuzatish
EDA Expert

3 Apr 2020, 11:20

Telegram'da ochish Ulashish Shikoyat qilish

Новая статья в блоге #Coventor: Identifying DRAM Failures Caused by Leakage Current and Parasitic Capacitance. https://www.coventor.com/blog/identifying-dram-failures-caused-by-leakage-current-and-parasitic-capacitance/ …pic.twitter.com/vaiTZKHDRF

➰ Twitter
Identifying DRAM Failures Caused by Leakage Current and Parasitic Capacitance | Coventor
Leakage current has become a critically important component in DRAM device design. DRAM next generation path-finding can be simplified by “virtually” building a 3D device using expected process flows and process variability, and subsequently analyzing parasitic and transistor effects under varying p...
👍
👎

15 0 0
Katalog
Kanal va guruhlar katalogi Kanallar to‘plamlari Kanallar qidiruvi Kanal/guruh qo‘shish
Reytinglar
Telegram-kanallar reytingi Telegram-guruhlar reytingi Postlar reytingi Brendlar va shaxslar reytingi
API
Statistika API'si Postlar qidiruvi API'si API Callback
Kanallarimiz
@TGStat @TGStat_Chat @telepulse @TGStatAPI
O‘qish
Академия TGStat Telegram tadqiqoti 2019 Telegram tadqiqoti 2021 Telegram tadqiqoti 2023
Kontaktlar
Справочный центр Qo‘llab-quvvatlash Email Vakansiyalar
Har xil narsalar
Foydalanuvchi shartnomasi Maxfiylik siyosati Ommaviy oferta
Botlarimiz
@TGStat_Bot @SearcheeBot @TGAlertsBot @tg_analytics_bot @TGStatChatBot